The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

Details The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As

2003-07-18

arxiv.org/abs/cond-mat/0307467v1

Physics

Condensed Matter

26 pages

Scientific paper

10.1063/1.1634390

Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low temperature annealing of Ga(1-x)Mn(x)As, which is known to reduce the Mn_I concentration. The reciprocal space maps measured for all the investigated samples showed that the Ga(1-x)Mn(x)As layers are fully strained - i.e., they remain pseudomorphic to the GaAs (001) substrate - for the entire thickness of the samples used (in the present case over 100 nm). In all cases studied the XRD measurements revealed high crystalline perfection of both as-grown as well as annealed Ga(1-x)Mn(x)As epilayers

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