The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

Details The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

2004-11-08

arxiv.org/abs/cond-mat/0411185v1

Semiconductor Science and Technology 20, 363 (2005)

Physics

Condensed Matter

Materials Science

11 pages, 10 figures

Scientific paper

10.1088/0268-1242/20/5/007

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid thermal annealing at 1000oC for 5 seconds, each implanted P ion contributes an additional 0.08 plus/minus 0.03 electrically active traps, whilst no increase in the number of traps is seen for comparable silicon implants. This result shows that the additional traps are ionized P donors, and not damage due to the implantation process. We also find, using the room temperature threshold voltage shift, that the electrical activation of donors at an implant density of 2x10^12 cm^-2 is ~100%.

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