The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

Details The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors

2003-06-11

arxiv.org/abs/cond-mat/0306297v1

Journal of Applied Physics 94, 3984 (2003)

Physics

Condensed Matter

6 figures, revtex

Scientific paper

10.1063/1.1603953

The strain in AlGaN/GaN heterojunction field-effect transistors (HFETs) is examined theoretically in the context of the fully-coupled equation of state for piezoelectric materials. Using a simple analytical model, it is shown that, in the absence of a two-dimensional electron gas (2DEG), the out-of-plane strain obtained without electromechanical coupling is in error by about 30% for an Al fraction of 0.3. This result has consequences for the calculation of quantities that depend directly on the strain tensor. These quantities include the eigenstates and electrostatic potential in AlGaN/GaN heterostructures. It is shown that for an HFET, the electromechanical coupling is screened by the 2DEG. Results for the electromechanical model, including the 2DEG, indicate that the standard (decoupled) strain model is a reasonable approximation for HFET calculataions. The analytical results are supported by a self-consistent Schr\"odinger-Poisson calculation that includes the fully-coupled equation of state together with the charge-balance equation.

Affiliated with

Also associated with

No associations

Rating

The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The effect of electromechanical coupling on the strain in AlGaN/GaN heterojunction field effect transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-458317