The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

Details The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering

2009-12-08

arxiv.org/abs/0912.1378v2

Phys. Rev. Lett. 105, 126601 (2010)

Physics

Condensed Matter

Materials Science

12 pages, 5 figures and supporting materials

Scientific paper

10.1103/PhysRevLett.105.126601

We demonstrate the atomic layer deposition of high-quality HfO2 film on graphene and report the magnitude of remote oxide phonon (ROP) scattering in dual-oxide graphene transistors. Top gates with 30 nm HfO2 oxide layer exhibit excellent doping capacity of greater than 1.5x10^(13)/cm^(2). The carrier mobility in HfO2-covered graphene reaches 20,000 cm^(2)/Vs at low temperature, which is the highest among oxide-covered graphene and compares to that of pristine samples. The temperature-dependent resistivity exhibits the effect of ROP scattering from both the SiO2 substrate and the HfO2 over-layer. At room temperature, surface phonon modes of the HfO2 film centered at 54 meV dominate and limit the carrier mobility to ~20,000 cm^(2)/Vs. Our results highlight the important choice of oxide in graphene devices.

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