The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures

Details The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures

2008-09-05

arxiv.org/abs/0809.0928v1

Physics

Condensed Matter

Materials Science

9 pages, 4 figures

Scientific paper

Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy and energy-dispersive X-ray spectrometry studies of the annealed contacts, our results allow for identifying the annealing mechanism and proposing a model that can predict optimal annealing parameters for a certain heterostructure.

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