Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

Details Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs Test of scaling theory in two dimensions in the presence of valley splitting and intervalley scattering in Si-MOSFETs

2009-10-28

arxiv.org/abs/0910.5510v1

Phys. Rev. B 82, 201308(R) (2010)

Physics

Condensed Matter

Disordered Systems and Neural Networks

Scientific paper

We show that once the effects of valley splitting and intervalley scattering
are incorporated, renormalization group theory consistently describes the
metallic phase in silicon metal-oxide-semiconductor field-effect transistors
down to the lowest accessible temperatures.

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