Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Details Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

2011-01-21

arxiv.org/abs/1101.4203v1

Nucl.Instrum.Meth.A638:33-40,2011

Physics

Instrumentation and Detectors

Scientific paper

10.1016/j.nima.2011.01.181

Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.

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