Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

Details Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3 Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

2010-07-26

arxiv.org/abs/1007.4482v2

Phys. Rev. B 82, 125120 (2010)

Physics

Condensed Matter

Strongly Correlated Electrons

10 pages, 5 figures

Scientific paper

10.1103/PhysRevB.82.125120

We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectance measurements utilizing both linearly and circularly polarized incident radiation were measured at a frequency of 5.24meV. A single fluid free carrier bulk response can not describe the line-shape. Surface states with a small mass and surprisingly large associated spectral weight quantitatively fit all data. However, carrier concentration inhomogeneity has not been ruled out. A method employing a gate is shown to be promising for separating surface from bulk effects.

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