Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells

Details Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells

2007-11-03

arxiv.org/abs/0711.0438v1

Physics

Condensed Matter

Materials Science

4 pages, 2 figures; presented in the 13th International Symposium on Ultrafast Phenomena in Semiconductors, Vilnius

Scientific paper

The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

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