Ten-nanometer surface intrusions in room temperature silicon

Details Ten-nanometer surface intrusions in room temperature silicon Ten-nanometer surface intrusions in room temperature silicon

2001-10-19

arxiv.org/abs/cond-mat/0110393v1

Electrochemical and Solid-State Letters, 5 (9) G83-G85 (2002)

Physics

Condensed Matter

Materials Science

4 pages, 5 figures, RevTeX4

Scientific paper

Defects ~10 nm in size, with number densities ~10^{10} cm^{-2}, form spontaneously beneath ion-milled, etched, or HF-dipped silicon surfaces examined in our Ti-ion getter-pumped transmission electron microscope (TEM) after exposure to air. They appear as weakly-strained non-crystalline intrusions into silicon bulk, that show up best in the TEM under conditions of strong edge or bend contrast. If ambient air exposure is <10 minutes, defect nucleation and growth can be monitored {\em in situ}. Possible mechanisms of formation are discussed.

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