Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces

Details Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces Temperature suppression of STM-induced desorption of hydrogen on Si(100) surfaces

1999-02-23

arxiv.org/abs/cond-mat/9902313v1

Physics

Condensed Matter

Materials Science

5 pages, RevTeX, epsf files. Accepted for surface science letters

Scientific paper

10.1016/S0039-6028(99)00202-2

The temperature dependence of hydrogen (H) desorption from Si(100) H-terminated surfaces by a scanning tunneling microscope (STM) is reported for negative sample bias. It is found that the STM induced H desorption rate ($R$) decreases several orders of magnitude when the substrate temperature is increased from 300 K to 610 K. This is most noticeable at a bias voltage of -7 V where $R$ decreases by a factor of ~200 for a temperature change of 80 K, whilst it only decreases by a factor of ~3 at -5 V upon the same temperature change. The experimental data can be explained by desorption due to vibrational heating by inelastic scattering via a hole resonance. This theory predicts a weak suppression of desorption with increasing temperature due to a decreasing vibrational lifetime, and a strong bias dependent suppression due to a temperature dependent lifetime of the hole resonance.

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