Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

Details Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel

2012-01-28

arxiv.org/abs/1201.5950v1

Phys. Rev. B 85, 035320 (2012)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures

Scientific paper

10.1103/PhysRevB.85.035320

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.

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