Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface

Details Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface

2009-03-11

arxiv.org/abs/0903.1862v2

Phys. Rev. B 80, 161310(R) (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures; revised and slightly shortened for publication;

Scientific paper

10.1103/PhysRevB.80.161310

Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field resistivity rho_{xx} displays strong temperature dependence for 0.07 < T < 25 K as predicted for a system with high degeneracy and large mass. We present a method for using the low-field Hall coefficient to probe intervalley momentum transfer (valley drag). The relaxation rate is consistent with Fermi liquid theory, but a small residual drag as T->0 remains unexplained.

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