Temperature dependent photoluminescence of single CdS nanowires

Details Temperature dependent photoluminescence of single CdS nanowires Temperature dependent photoluminescence of single CdS nanowires

2006-06-15

arxiv.org/abs/cond-mat/0606428v1

Physics

Condensed Matter

Materials Science

11 pages, 4 figures

Scientific paper

10.1063/1.2357003

Temperature dependent photoluminescence (PL) is used to study the electronic properties of single CdS nanowires. At low temperatures, both near-band edge (NBE) photoluminescence (PL) and spatially-localized defect-related PL are observed in many nanowires. The intensity of the defect states is a sensitive tool to judge the character and structural uniformity of nanowires. As the temperature is raised, the defect states rapidly quench at varying rates leaving the NBE PL which dominates up to room temperature. All PL lines from nanowires follow closely the temperature-dependent band edge, similar to that observed in bulk CdS.

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