Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers

Details Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers

2004-10-21

arxiv.org/abs/cond-mat/0410549v1

Phys. Rev. B 70, 245325 (2004)

Physics

Condensed Matter

Materials Science

7 pages, 5 Postscript figures, uses revtex4

Scientific paper

10.1103/PhysRevB.70.245325

It is demonstrated by SQUID measurements that (Ga,Mn)As films can exhibit perpendicular easy axis at low temperatures, even under compressive strain, provided that the hole concentration is sufficiently low. In such films, the easy axis assumes a standard in-plane orientation when the temperature is raised towards the Curie temperature or the hole concentration is increased by low temperature annealing. These findings are shown to corroborate quantitatively the predictions of the mean-field Zener model for ferromagnetic semiconductors. The in-plane anisotropy is also examined, and possible mechanisms accounting for its character and magnitude are discussed.

Affiliated with

Also associated with

No associations

Rating

Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-228096