Temperature-dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface

Details Temperature-dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface Temperature-dependent electron microscopy study of Au thin films on Si (100) with and without native oxide layer as barrier at the interface

2012-02-03

arxiv.org/abs/1202.0647v1

J. Phys. D: Appl. Phys. 44 115301(2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

27 pages, 7 figures, 1 Table

Scientific paper

10.1088/0022-3727/44/11/115301

Real time electron microscopy observation on morphological changes in gold nano structures deposited on Si (100) surfaces as a function of annealing temperatures has been reported. Two types of interfaces with the substrate silicon were used prior to gold thin film deposition: (i) without native oxide and on ultra-clean reconstructed Si surfaces and (ii) with native oxide covered Si surfaces. For a \approx 2.0 nm thick Au films deposited on reconstructed Si(100) surfaces using molecular beam epitaxy method under ultra high vacuum conditions, aligned four-fold symmetric nanogold silicide structures formed at relatively lower temperatures (compared with the one with native oxide at the interface). For this system, 82% of the nanostructures were found to be nano rectangles like structures with an average length \approx 27 nm and aspect ratio of 1.13 at \approx 700{\deg}C. For \approx 5.0 nm thick Au films deposited on Si (100) surface with native oxide at the interface, formation of rectangular structures were observed at higher temperatures (\approx 850{\deg} C). At these high temperatures, desorption of the gold silicide followed the symmetry of the substrate. Native oxide at the interface was found to act like a barrier for the inter-diffusion phenomena. Structural characterization was carried out using advanced electron microscopy methods.

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