Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs

Details Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs

2006-08-24

arxiv.org/abs/cond-mat/0608534v5

Phys. Rev. B 79, 193307 (2009) [4 pages]

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevB.79.193307

Very high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature dependent effective mass a temperature dependence of the interband matrix element within a common five level kp-theory can model both parameters consistently. A strong decrease of the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters.

Affiliated with

Also associated with

No associations

Rating

Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-339054