Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device

Details Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin injection device

2010-04-07

arxiv.org/abs/1004.1034v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

10 pages, 4 figures

Scientific paper

The nonlocal spin resistance is measured as a function of temperature in a Fe/GaAs spin-injection device. For nonannealed samples that show minority-spin injection, the spin resistance is observed up to room temperature and decays exponentially with temperature at a rate of 0.018\,K$^{-1}$. Post-growth annealing at 440\,K increases the spin signal at low temperatures, but the decay rate also increases to 0.030\,K$^{-1}$. From measurements of the diffusion constant and the spin lifetime in the GaAs channel, we conclude that sample annealing modifies the temperature dependence of the spin transfer efficiency at injection and detection contacts. Surprisingly, the spin transfer efficiency increases in samples that exhibit minority-spin injection.

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