Temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+δ}$ by Scanning Tunneling Spectroscopy

Details Temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+δ}$ by Scanning Tunneling Spectroscopy Temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+δ}$ by Scanning Tunneling Spectroscopy

2007-05-30

arxiv.org/abs/0705.4386v2

Phys. Rev. B 76, 052506 (2007).

Physics

Condensed Matter

Superconductivity

4 pages, 3 figures, to appear in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.76.052506

We report on the temperature dependence of the impurity-induced resonant state in Zn-doped Bi_2Sr_2CaCu_2O$_{8+\delta}$ by scanning tunneling spectroscopy at 30 mK < T < 52 K. It is known that a Zn impurity induces a sharp resonant peak in tunnel spectrum at an energy close to the Fermi level. We observed that the resonant peak survives up to 52 K. The peak broadens with increasing temperature, which is explained by the thermal effect. This result provides information to understand the origin of the resonant peak.

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