Temperature dependence of the dielectric permittivity of CaF2, BaF2 and Al2O3: application to the prediction of a temperature dependent van der Waals surface interaction exerted onto a neighbouring Cs (8P{3/2}) atom

Details Temperature dependence of the dielectric permittivity of CaF2, BaF2 and Al2O3: application to the prediction of a temperature dependent van der Waals surface interaction exerted onto a neighbouring Cs (8P{3/2}) atom Temperature dependence of the dielectric permittivity of CaF2, BaF2 and Al2O3: application to the prediction of a temperature dependent van der Waals surface interaction exerted onto a neighbouring Cs (8P{3/2}) atom

2009-05-28

arxiv.org/abs/0905.4710v1

Journal of Physics : Condensed Matter 21 (2009) 255902

Physics

Condensed Matter

Materials Science

Scientific paper

10.1088/0953-8984/21/25/255902

The temperature behaviour in the range 22\degree C to 500\degree C of the dielectric permittivity in the infrared range is investigated for CaF2, BaF2 and Al2O3 through reflectivity measurements. The dielectric permittivity is retrieved by fitting reflectivity spectra with a model taking into account multiphonon contributions. The results extrapolated from the measurements are applied to predict a temperature-dependent atom-surface van der Waals interaction. We specifically consider as the atom of interest Cs (8P3/2), the most relevant virtual couplings of which, fall in the range of thermal radiation and are located in the vicinity of the reststrahlen band of fluoride materials.

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