Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

Details Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession Temperature dependence of spin diffusion length in silicon by Hanle-type spin precession

2010-03-09

arxiv.org/abs/1003.1777v1

Physics

Condensed Matter

Materials Science

12 pages, 4 figure, To appear in Applied Physics Letters

Scientific paper

The Hanle-type spin precession method was carried out associated with non-local magnetoresistance measurement using a highly doped (5\times10^19) silicon channel. The spin diffusion length obtained by the Hanle-method is in good agreement with that by the gap dependence of non-local signals. We have evaluated the interface and bulk channel effects separately, and it was demonstrated that the major source of temperature dependence of non-local signals originates from the spin polarization reduction at interface between the tunnel barrier and silicon.

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