Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN

Details Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN

2009-07-27

arxiv.org/abs/0907.4735v1

Phys. Rev. B 80, 134514 (2009)

Physics

Condensed Matter

Disordered Systems and Neural Networks

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Scientific paper

10.1103/PhysRevB.80.134514

We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these films varies from 8.13K to 16.8K. While our least disordered film displays usual metallic behavior, for all the films with kFl<8.13, both and are negative up to 300K. We observe that R_H(T) varies linearly with rho(T) for all the films. Measurements performed on a 2nm thick Be film shows similar behavior >. This behavior is inconsistent with existing theories of localization and e-e interactions in a disordered metal.

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