Temperature Dependence of Hall Response in Doped Antiferromagnets

Details Temperature Dependence of Hall Response in Doped Antiferromagnets Temperature Dependence of Hall Response in Doped Antiferromagnets

2002-03-25

arxiv.org/abs/cond-mat/0203518v1

Physics

Condensed Matter

Strongly Correlated Electrons

LaTeX, 4 pages, 4 figures, submitted to PRL

Scientific paper

10.1103/PhysRevB.66.020408

Using finite-temperature Lanczos method the frequency-dependent Hall response is calculated numerically for the t-J model on the square lattice and on ladders. At low doping, both the high-frequency RH* and the d.c. Hall coefficient RH0 follow qualitatively similar behavior at higher temperatures: being hole-like for T > Ts~1.5J and weakly electron-like for T < Ts. Consistent with experiments on cuprates, RH0 changes, in contrast to RH*, again to the hole-like sign below the pseudogap temperature T*, revealing a strong temperature variation for T->0.

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