Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes

Details Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes

2007-01-08

arxiv.org/abs/cond-mat/0701137v1

Nanoletters (2007) 8

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

We study the excitonic recombination dynamics in an ensemble of (9,4) semiconducting single-wall carbon nanotubes by high sensitivity time-resolved photo-luminescence experiments. Measurements from cryogenic to room temperature allow us to identify two main contributions to the recombination dynamics. The initial fast decay is temperature independent and is attributed to the presence of small residual bundles that create external non-radiative relaxation channels. The slow component shows a strong temperature dependence and is dominated by non-radiative processes down to 40 K. We propose a quantitative phenomenological modeling of the variations of the integrated photoluminescence intensity over the whole temperature range. We show that the luminescence properties of carbon nanotubes at room temperature are not affected by the dark/bright excitonic state coupling.

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