Temperature dependence of D'yakonov-Perel' spin relaxation in zinc blende semiconductor quantum structures

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

9 pages, 4 figures

Scientific paper

10.1103/PhysRevB.70.195322

The D'yakonov-Perel' mechanism, intimately related to the spin splitting of the electronic states, usually dominates the spin relaxation in zinc blende semiconductor quantum structures. Previously it has been formulated for the two limiting cases of low and high temperatures. Here we extend the theory to give an accurate description of the intermediate regime which is often relevant for room temperature experiments. Employing the self-consistent multiband envelope function approach, we determine the spin splitting of electron subbands in n-(001) zinc blende semiconductor quantum structures. Using these results we calculate spin relaxation rates as a function of temperature and obtain excellent agreement with experimental data.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Temperature dependence of D'yakonov-Perel' spin relaxation in zinc blende semiconductor quantum structures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Temperature dependence of D'yakonov-Perel' spin relaxation in zinc blende semiconductor quantum structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Temperature dependence of D'yakonov-Perel' spin relaxation in zinc blende semiconductor quantum structures will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-334924

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.