Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts

Details Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts

2011-04-06

arxiv.org/abs/1104.1030v1

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010.- V.13, N4.- P.436-438

Physics

Condensed Matter

Materials Science

Scientific paper

We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-gap semiconductors with high concentration of surface states and dislocation density in the contact.

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