Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions

Details Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions

1998-07-06

arxiv.org/abs/cond-mat/9807097v1

Physics

Condensed Matter

Strongly Correlated Electrons

3 pages, 4 figures

Scientific paper

10.1063/1.122068

Thin film trilayer junction of La$%_{0.67}$Sr$_{0.33}$MnO$_3$ - SrTiO$_3$ - La$_{0.67}$Sr$_{0.33}$MnO$_3$ shows a factor of 9.7 change in resistance, in a magnetic field around 100 Oe at 14K. The junction magnetoresistance is bias and temperature dependent. The energy scales associated with bias and temperature dependence are an order of magnitude apart. The same set of energies also determine the bias and temperature dependence of the differential conductance of the junction. We discuss these results in terms of metallic cluster inclusions at the junction-barrier interface.

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