Tailoring the magnetism of GaMnAs films by ion irradiation

Details Tailoring the magnetism of GaMnAs films by ion irradiation Tailoring the magnetism of GaMnAs films by ion irradiation

2010-12-08

arxiv.org/abs/1012.1678v1

Physics

Condensed Matter

Materials Science

15 pages, 4 figures, accepted for publication at J. Phys. D

Scientific paper

Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects.

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