Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Details Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

2000-05-23

arxiv.org/abs/cond-mat/0005392v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

23 pages, and 8 figures

Scientific paper

10.1063/1.1323540

A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

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