Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System

Details Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System

2011-08-25

arxiv.org/abs/1108.5069v1

J. Supercond. Nov. Magn. 22 599-602 (2009)

Physics

Condensed Matter

Superconductivity

5 pages, 4 figures

Scientific paper

The FeSe samples in the form of polycrystals, single crystals and thin films have been prepared and characterized. The synthesized material has been hot isostatically pressed under pressure of 0.45 GPa of 5N purity argon with the use of the high gas pressure trap system (HGPTS). Thin films have been fabricated by the mixed procedures with the use of DC sputtering from various types of targets and processed employing the HGPTS. The used HGPTS assures a full separation of the active volume for synthesis or crystal growth of material and the inert gas medium. The obtained FeSe0.88 samples have Tc between 8 and 12 K. The samples have been characterized by SEM, EDX, XRD, magnetic susceptibility and resistivity measurements.

Affiliated with

Also associated with

No associations

Rating

Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-319069