Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)

Details Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110) Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)

2000-06-08

arxiv.org/abs/cond-mat/0006134v1

Phys. Rev. Lett. 84, 5816-5819 (2000)

Physics

Condensed Matter

Materials Science

5 pages including 3 figures. related publications can be found at http://www.fhi-berlin.mpg.de/th/paper.html

Scientific paper

10.1103/PhysRevLett.84.5816

The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.

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