Switching of the Mott transition based on the hole-driven MIT theory

Details Switching of the Mott transition based on the hole-driven MIT theory Switching of the Mott transition based on the hole-driven MIT theory

2008-04-15

arxiv.org/abs/0804.2314v1

Physica B 403 (2008) 1434-1436

Physics

Condensed Matter

Strongly Correlated Electrons

2 pages, 1 figure

Scientific paper

10.1016/j.physb.2007.10.188

Switching voltage of first-order metal-insulator transition (MIT) in VO_2, an inhomogeneous strongly correlated system, is changed by irradiating an infrared light with wavelength, 1.5 micrometer, and applying the electric field (photo-induced switching). This was predicted in the hole-driven MIT theory in which hole doping of a low concentration below 0.01% into conduction band (Fermi surface) induces the abrupt MIT as correlation effect. The switching is explained by the Mott transition not the Peierls transition.

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