Switching of electrical current by spin precession in the first Landau level of an inverted-gap semiconductor

Details Switching of electrical current by spin precession in the first Landau level of an inverted-gap semiconductor Switching of electrical current by spin precession in the first Landau level of an inverted-gap semiconductor

2009-06-12

arxiv.org/abs/0906.2357v2

Phys. Rev. B 80, 195320 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures, extended version

Scientific paper

10.1103/PhysRevB.80.195320

We show how the quantum Hall effect in an inverted-gap semiconductor (with electron- and hole-like states at the conduction- and valence-band edges interchanged) can be used to inject, precess, and detect the electron spin along a one-dimensional pathway. The restriction of the electron motion to a single spatial dimension ensures that all electrons experience the same amount of precession in a parallel magnetic field, so that the full electrical current can be switched on and off. As an example, we calculate the magnetoconductance of a p-n interface in a HgTe quantum well and show how it can be used to measure the spin precession due to bulk inversion asymmetry.

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