Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

Details Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

2011-05-14

arxiv.org/abs/1105.2889v2

Appl. Phys. Lett. 99, 012109 (2011)

Physics

Condensed Matter

Materials Science

13 pages, 3 figures, 1 table, Error in Figure 2(c) corrected and replaced

Scientific paper

10.1063/1.3607484

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi level naturally resides in the conduction band due to intrinsic doping by selenium vacancies, leading to metallic bulk states. In such non-ideal TIs it is not well understood how the surface and bulk states behave under environmental disorder. In this letter, based on transport measurements of Bi2Se3 thin films, we show that the bulk states are sensitive to environmental disorder but the surface states remain robust.

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