Surface Reconstructions and Bonding via the Electron Localization Function: The Case of Si(001)

Details Surface Reconstructions and Bonding via the Electron Localization Function: The Case of Si(001) Surface Reconstructions and Bonding via the Electron Localization Function: The Case of Si(001)

1999-03-19

arxiv.org/abs/cond-mat/9903303v1

Physics

Condensed Matter

Materials Science

6 pages, 8 included figures; revtex file. To appear on Solid State Communications

Scientific paper

10.1016/S0038-1098(99)00138-6

The bonding pattern of a covalent semiconductor is disrupted when a surface is cut while keeping a rigid (truncated bulk) geometry. The covalent bonds are partly reformed (with a sizeable energy gain) when reconstruction is allowed. We show that the ``electron localization function'' (ELF)---applied within a first--principles pseudopotential framework---provides un unprecedented insight into the bonding mechanisms. In the unreconstructed surface one detects a partly metallic character, which disappears upon reconstruction. In the surface reformed bonds, the ELF sharply visualizes strongly paired electrons, similar in character to those of the bulk bonds.

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