Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1×1 surfaces

Details Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1×1 surfaces Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1×1 surfaces

Jul 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010njph...12g3007l&link_type=abstract

New Journal of Physics, Volume 12, Issue 7, pp. 073007 (2010).

Physics

1

Scientific paper

Epitaxial growth and magnetic properties of Co thin films on GaN(0001)-1×1 surfaces are studied. The films show degraded saturation magnetization due to the interfacial interaction. On excess-Ga-induced pseudo-1×1 surface, 30°-rotation domains in the Co epilayer are inevitable and the films show in-plane magnetic anisotropy. By annealing the starting surface of pseudo-1×1 and to achieve a Ga-less 1×1 surface, single domain Co epifilms having orientations aligned with the substrate can be grown, which facilitates in-plane uniaxial magnetic anisotropy.

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