Surface effects in doping a Mott insulator

Details Surface effects in doping a Mott insulator Surface effects in doping a Mott insulator

2011-03-04

arxiv.org/abs/1103.0965v1

Phys. Rev. B 83, 155116 (2011)

Physics

Condensed Matter

Strongly Correlated Electrons

accepted in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.83.155116

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator is driven by a combination of charge transfer effects and enhanced correlation effects. Approaching a Mott insulating phase from the metallic side, we show that a dead layer forms at the surface of the solid, where quasiparticle amplitudes are exponentially suppressed. Surface correlation and charge transfer effects can be strongly impacted by changes of the hopping integrals at the surface.

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