Surface-acoustic-wave-driven luminescence from a lateral p-n junction

Details Surface-acoustic-wave-driven luminescence from a lateral p-n junction Surface-acoustic-wave-driven luminescence from a lateral p-n junction

2007-01-28

arxiv.org/abs/cond-mat/0701689v1

Applied Physics Letters 89, 243505 (2006)

Physics

Condensed Matter

Other Condensed Matter

4 pages, 3 figures

Scientific paper

10.1063/1.2753759

The authors report surface-acoustic-wave-driven luminescence from a lateral p-n junction formed by molecular beam epitaxy regrowth of a modulation doped GaAs/AlGaAs quantum well on a patterned GaAs substrate. Surface-acoustic-wave-driven transport is demonstrated by peaks in the electrical current and light emission from the GaAs quantum well at the resonant frequency of the transducer. This type of junction offers high carrier mobility and scalability. The demonstration of surface-acoustic-wave luminescence is a significant step towards single-photon applications in quantum computation and quantum cryptography.

Affiliated with

Also associated with

No associations

Rating

Surface-acoustic-wave-driven luminescence from a lateral p-n junction does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Surface-acoustic-wave-driven luminescence from a lateral p-n junction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface-acoustic-wave-driven luminescence from a lateral p-n junction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-197081