Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells

Details Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells Suppression of Edge Recombination in InAs/InGaAs DWELL Solar Cells

2011-02-12

arxiv.org/abs/1102.2466v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

The InAs/InGaAs DWELL solar cell grown by MBE is a standard pin diode structure with six layers of InAs QDs embedded in InGaAs quantum wells placed within a 200-nm intrinsic GaAs region. The GaAs control wafer consists of the same pin configuration but without the DWELL structure. The typical DWELL solar cell exhibits higher short current density while maintaining nearly the same open-circuit voltage for different scales, and the advantage of higher short current density is more obvious in the smaller cells. In contrast, the smaller size cells, which have a higher perimeter to area ratio, make edge recombination current dominant in the GaAs control cells, and thus their open circuit voltage and efficiency severely degrade. The open-circuit voltage and efficiency under AM1.5G of the GaAs control cell decrease from 0.914V and 8.85% to 0.834V and 7.41%, respectively, as the size shrinks from 5*5mm2 to 2*2mm2, compared to the increase from 0.665V and 7.04% to 0.675V and 8.17%, respectively, in the DWELL solar cells.

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