Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4 pages, 5 figures

Scientific paper

10.1103/PhysRevB.77.155429

We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations in conductance as a function of applied gate voltage or magnetic field were found. As the gate voltage was tuned so that the graphene device was pushed to the charge neutral point, the amplitude of the conductance fluctuation was found to be suppressed quickly from a value consistent with universal conductance fluctuation when the devices were still well within weakly disordered regime. The possible physical origins of the suppression are discussed.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-415006

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.