Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

Details Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties

2011-06-03

arxiv.org/abs/1106.0580v1

Appl. Phys. Lett. 99, 023112 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In2Se3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs.

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