Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

Details Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions

2011-08-24

arxiv.org/abs/1108.4831v1

Applied Physics Letters 98, 202103 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 3 figures

Scientific paper

10.1063/1.3590921

We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is observed to be typically 0.91\pm0.01 in the parallel configuration. It indicates the sub-Poissonian process of the electron tunneling in the parallel configuration due to the relevance of the spin-dependent coherent transport in the low bias regime.

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