Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2008-10-28
Electron Device Letters, Nov.2008, Vol. 29, 11, pp. 1242-1244
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
Scientific paper
10.1109/LED.2008.2004784
In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source voltage VDS smaller than 3 V, so that programming occurs via electrons tunneling through a potential barrier whose height has been effectively reduced by the accumulated kinetic energy. Particle energy distribution at the semiconductor/oxide interface is studied for different bias conditions and different positions along the channel. The gate current is calculated with a continuum-based post-processing method as a function of the particle distribution obtained from Monte Carlo. Simulation results show that the gate current increases by several orders of magnitude with increasing drain bias and warm electron injection can be an interesting option for programming when short channel effects prohibit the application of larger drain bias.
Giusi Gino
Iannaccone Giovanni
Mohamed Mansour
Ravaioli Umberto
No associations
LandOfFree
Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-486024