Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres

Details Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres

1995-01-26

arxiv.org/abs/cond-mat/9501125v1

Physics

Condensed Matter

17 pp, 4 Fig. (upon request), Latex

Scientific paper

We study by photoacoustic spectroscopy the band--gap shift effect of CdS films. The CdS films were grown by chemical bath deposition and exposed to different annealing atmospheres over a range of temperature in which the sample structure is observed to change. We show the band--gap evolution as a function of temperature of thermal annealing and determine the process which produces the best combination of high band--gap energy and low resistivity. It allows us to know a possible procedure to obtain low--resistivity CdS/CdTe solar cells with high--quantum efficiency.

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