Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System

Details Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System Studies of the Temperature-Driven Flow Lines and Phase Transitions in a Two-Dimensional Si/SiGe Hole System

2002-01-18

arxiv.org/abs/cond-mat/0201333v2

Chinese Journal of Physics, 39, L305 (2001)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

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Scientific paper

We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $\sigma_{xx}$ and $\sigma_{xy}$ allow us to study the magnetic-field-induced transitions in the system. In particular, we present the first study of the temperature-driven flow lines in the "anomalous Hall insulator" regime near a Landau level filling factor $\nu=1.5$. The "anomalous" temperature-driven flow lines could be due to the unusual energy level scheme in a Si/SiGe hole system. Moreover, for $3<\nu<5$, there is a temperature-independent point in $\rho_{xx} (B)$, $\rho_{xy} (B)$, $\sigma_{xx}$, and $\sigma_{xy}$ which corresponds to a boundary of the quantum phase transition.

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