Structure and electronic properties of epitaxial graphene grown on SiC

Details Structure and electronic properties of epitaxial graphene grown on SiC Structure and electronic properties of epitaxial graphene grown on SiC

2010-01-21

arxiv.org/abs/1001.3869v1

Physics

Condensed Matter

Materials Science

13 pages, 16 figures

Scientific paper

We review progress in developing epitaxial graphene as a material for carbon electronics. In particular, improvements in epitaxial graphene growth, interface control and the understanding of multilayer epitaxial graphene's electronic properties are discussed. Although graphene grown on both polar faces of SiC is addressed, our discussions will focus on graphene grown on the (000-1) C-face of SiC. The unique properties of C-face multilayer epitaxial graphene have become apparent. These films behave electronically like a stack of nearly independent graphene sheets rather than a thin Bernal-stacked graphite sample. The origin of multilayer graphene's electronic behavior is its unique highly-ordered stacking of non-Bernal rotated graphene planes. While these rotations do not significantly affect the inter-layer interactions, they do break the stacking symmetry of graphite. It is this broken symmetry that causes each sheet to behave like an isolated graphene plane.

Affiliated with

Also associated with

No associations

Rating

Structure and electronic properties of epitaxial graphene grown on SiC does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Structure and electronic properties of epitaxial graphene grown on SiC, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure and electronic properties of epitaxial graphene grown on SiC will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-249665