Physics – Condensed Matter – Materials Science
Scientific paper
2009-01-16
Physics
Condensed Matter
Materials Science
21 pages and 10 figures; accepted for publication in Acta Materialia (2009)
Scientific paper
The structural relaxation of amorphous materials is described as arising from the superposition of elementary processes with varying activation energies. We show that it is possible to obtain the kinetic parameters of these processes from differential scanning calorimetry experiments. The transformation rate is predicted for the transient decay when an isotherm is reached and for the relaxation threshold detected in partially relaxed samples. Good agreement is obtained with experiment if the individual components transform through first-order kinetics, but inconsistencies arise for second-order components. Our analysis, that improves the classical treatment by Gibbs et al.[1], allows the activation energies and the pre-exponential rate constants to be extracted independently. When applied to a-Si, we conclude that the pre-exponential rate constant is far from constant. The kinetic parameters obtained from DSC are used to analyze the relaxation of a-Si in pulsed laser experiments and to discuss the relationship between structural relaxation and crystallization.
Farjas Jordi
Roura Pere
No associations
LandOfFree
Structural Relaxation Kinetics for First and Second-Order Processes: Application to Pure Amorphous Silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Structural Relaxation Kinetics for First and Second-Order Processes: Application to Pure Amorphous Silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structural Relaxation Kinetics for First and Second-Order Processes: Application to Pure Amorphous Silicon will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-127506