Physics – Condensed Matter
Scientific paper
1993-12-03
Physics
Condensed Matter
11 pages REVTEX, 4 figures available upon request, SISSA-CM-93/XXX
Scientific paper
Available simulation methods, suitable to describe solid-solid phase transitions occurring upon increasing of presssure and/or temperature, are based on empirical interatomic potentials: this restriction reduces the predictive power, and thus the general usefulness of numeric simulations in this very relevant field. We present a new simulation scheme which allows, for the first time, the simulation of these phenomena with the correct quantum-mechanical description of interatomic forces and internal stress, along with the correct statistical mechanics of ionic degrees of freedom. The method is obtained by efficiently combining the Car-Parrinello method for ab- initio molecular dynamics with the Parrinello Rahman method to account for a variable cell shape. Within this scheme phase trasformations may spontaneously take place during the simulation with variation of external pressure and/or temperature. The validity of the method is demonstrated by simulating the metal-insulator transition in Silicon (from diamond structure to simple hexagonal structure) under high pressure.
Bernasconi Marco
Chiarotti Guido L.
Focher P.
Parrinello Michele
Tosatti Erio
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