Strongly Non-Arrhenius Self-Interstitial Diffusion in Vanadium

Details Strongly Non-Arrhenius Self-Interstitial Diffusion in Vanadium Strongly Non-Arrhenius Self-Interstitial Diffusion in Vanadium

2004-01-26

arxiv.org/abs/cond-mat/0401525v1

Physics

Condensed Matter

Materials Science

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.70.060102

We study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular dynamics simulations. The <111>-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other <111> directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T<600 K, this behavior arises from temperature-dependent correlations. At T>600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T.

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