Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires

Details Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires Strong g-Factor Anisotropy in Hole Quantum Dots Defined in Ge/Si Nanowires

2007-06-19

arxiv.org/abs/0706.2883v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five top gate electrodes with a periodicity of 80 nm, insulated from the wire by a 20 nm-thick HfO_2 dielectric film. Low-temperature transport measurements were used to investigate the magnetic field dependence of Coulomb blockade peaks in a single quantum dot and indicate a strongly anisotropic g-factor with |g_para| = 0.60 +/- 0.03 and |g_perp| < 0.12.

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